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Suppose a pure Si crystal has 6xx10^(28)...

Suppose a pure Si crystal has `6xx10^(28)` atoms `m^(-3)`. It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that `n_(i)=0.5xx10^(16)m^(-3)`

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To solve the problem step by step, we will follow the given information and apply the relevant concepts of semiconductor physics. ### Step 1: Understand the given data - The number of silicon atoms in the crystal, \( N_{Si} = 6 \times 10^{28} \, \text{atoms/m}^3 \) - The concentration of dopant (pentavalent arsenic) is given as 1 ppm. - The intrinsic carrier concentration of silicon, \( n_i = 0.5 \times 10^{16} \, \text{m}^{-3} \) ### Step 2: Calculate the number of dopant atoms ...
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Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that n_(i)=1.5xx10^(16)m^(-3) .

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Calculate the gyro magnetic ratio of electron (given 1.6 xx10^(-19) C, m_r=9.1xx10^(-3) kg )

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A semiconductor crystal has equal electron and hole concentration of 9xx10^(8) m^(-3) it is doped by indium so that the hole concentration increases to 4.5 xx10^(12) m^(-3) calculate the new concentration of free electrons in the doped crystal nad also mention its type

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

NARAYNA-SEMICONDUCTOR ELECTRONICS-ADDITIONAL EXERCISE (ASSERTION AND REASON TYPE QUESTIONS :)
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  8. Statement-I : A p-n junction with reverse bias can be used as a photod...

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  9. Assertion : In common base configuration, the current gain of the tran...

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  10. Statement-I : Germanium is preferred over silicon for making semicondu...

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  12. Assertion : For a given applied voltage, conduction current in n-type ...

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  13. Assertion : We cannot meausre that potential barrier of p-n junction b...

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  14. Assertion : In Zener diode depletion layer is thin. Reason : In rev...

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  15. Statement-I : A p-n junction with reverse bias can be used as a photod...

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  16. Statement-I : When base region has larger width, the collector current...

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  17. Statement-I : To be used as amplifier, the transistor in the common em...

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  18. Assertion : A transistor amplifier operates in active region. Reason...

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  19. Assertion: NAND or NOR gates are called digital building blocks. Rea...

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  20. Assertion : In transistor, common emitter configuration is used to mak...

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