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Carbon silicon and germanium have four v...

Carbon silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to `(E_(g))_(C), (E_(g))_(Si) " ""and" " "(E_(g))_(Ge)` which of the following statements is true?

A

`(E_(g))_(Si) lt (E_(g))_(Ge) lt (E_(g))_(C)`

B

`(E_(g))_(C) lt (E_(g))_(Ge) lt (E_(g))_(Si)`

C

`(E_(g))_(C) gt (E_(g))_(Si) gt (E_(g))_(Ge)`

D

`(E_(g))_(C) = (E_(g))_(Si) = (E_(g))_(Ge)`

Text Solution

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The correct Answer is:
C
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In semiconductors at a room temperature

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  2. In a n-type semiconductor, which of the following statement is true?

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  3. Carbon silicon and germanium have four valence electrons each. These a...

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  4. Identify the property which is not characteristic for a semiconductor ...

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  5. Carbon , silicon and germanium have four valence electrons each . At r...

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  6. When phosphorus and antimony are mixed in germanium, then

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  7. An electrically neutral semiconductor has

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  8. There is no hole current in conductors because they have

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  9. In the insulators

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  10. In semiconductors the for bidden energy gap between V.B and C.B is of ...

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  11. The level formed due to impurity atom, in the for hidden energy gap, v...

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  12. The bond in semiconductors is

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  13. On increasing temperature, the conductivity of pure semiconductors

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  14. The mobility of free electrons is greater then that of free holes beca...

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  15. A semiconductor at 0 K behaves as

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  16. The valency of impurity element for making p-type semiconductors is

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  17. In n-type semiconductors the electron concentration is equal to

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  18. Which of the following statement is not true ?

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  19. p-type semi conduor is

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  20. An n-type semi- conductor is

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