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The level formed due to impurity atom, i...

The level formed due to impurity atom, in the for hidden energy gap, very near to the valence band in a p-type semiconductor is called

A

acceptor level

B

donar level

C

conducion leve

D

forbidden level

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The correct Answer is:
A
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In the insulators

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  2. In semiconductors the for bidden energy gap between V.B and C.B is of ...

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  3. The level formed due to impurity atom, in the for hidden energy gap, v...

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  4. The bond in semiconductors is

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  5. On increasing temperature, the conductivity of pure semiconductors

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  6. The mobility of free electrons is greater then that of free holes beca...

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  7. A semiconductor at 0 K behaves as

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  8. The valency of impurity element for making p-type semiconductors is

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  9. In n-type semiconductors the electron concentration is equal to

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  10. Which of the following statement is not true ?

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  11. p-type semi conduor is

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  12. An n-type semi- conductor is

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  13. An electric field is applied across a semiconductor. Let n be the numb...

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  14. In a n-type semiconductor, the femi energy level lies

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  15. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  16. The width of forbidden gap in silicon crystal is 1.1 eV. When the crys...

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  17. In extrinsic semiconductors

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  18. The element that can be used as acceptor impurity to dope silicon is

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  19. Among the following, the wrong statement on the case of semiconductor ...

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  20. The value indicated by fermi energy level in an intrinsic semiconducto...

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