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The width of forbidden gap in silicon cr...

The width of forbidden gap in silicon crystal is `1.1 eV`. When the crystal is converted into a `N`-type semiconductor the distance of Fermi level from conduction band is

A

Greater than `0.55eV`

B

Equal to `0.55eV`

C

Lesser than `0.55eV`

D

Equal to `1.1eV`

Text Solution

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The correct Answer is:
C
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In a n-type semiconductor, the femi energy level lies

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  2. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  3. The width of forbidden gap in silicon crystal is 1.1 eV. When the crys...

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  4. In extrinsic semiconductors

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  5. The element that can be used as acceptor impurity to dope silicon is

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  6. Among the following, the wrong statement on the case of semiconductor ...

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  7. The value indicated by fermi energy level in an intrinsic semiconducto...

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  8. The conduction band and valency band of a good conductors are

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  9. Two pieces one of germinium and the other of aluminium are cooled from...

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  10. In intrinsic semiconductor at room temperature the no. of electrons an...

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  11. Band gap in insulator is of the order

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  12. In p-type semiconductor conduction in due to

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  13. In an intrinsic semiconductor, the fermi energy level is

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  14. With increase in temperature in an intrinsic semiconductor the ration ...

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  15. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  16. What are the majority carriers in a p-type semiconductor?

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  17. The objective of adding impurities in the extrinsic semiconductor is

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  18. In intrinsic semiconductor conductivity is due to.

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  19. In intrinsic semiconductor conductivity is due to.

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  20. When the conductivity of a semiconductor is only due to breaking of co...

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