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In an intrinsic semiconductor, the fermi...

In an intrinsic semiconductor, the fermi energy level is

A

nearer to valence band than condcution band

B

equidistant from conduction band and valence band

C

nearer to conduction band than valence band

D

bisecing the conduction band

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The correct Answer is:
B
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In an n-type semiconductor, the fermi level lies 0.3 eV below the conduction band at 300 K. If the temperature is increased to 330K, where does the new position of the Fermi level lie?

NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. Band gap in insulator is of the order

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  2. In p-type semiconductor conduction in due to

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  3. In an intrinsic semiconductor, the fermi energy level is

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  4. With increase in temperature in an intrinsic semiconductor the ration ...

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  5. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  6. What are the majority carriers in a p-type semiconductor?

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  7. The objective of adding impurities in the extrinsic semiconductor is

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  8. In intrinsic semiconductor conductivity is due to.

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  9. In intrinsic semiconductor conductivity is due to.

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  10. When the conductivity of a semiconductor is only due to breaking of co...

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  11. The potential barrier at PN junction is due to

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  12. A PN junction diode cannot be used

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  13. p-n junction diode acts as

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  14. On increasing reverse voltage in a p-n junction diode the value of rev...

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  15. In forward bias the depletion layer behaves like

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  16. p-n junction in reverse bias behaves like

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  17. The main cause of avalence breakdown is

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  18. When p-n junction is forward biased, the current across the junction i...

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  19. The current through any p-n junction is due to (a) drift of charge c...

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  20. The thickness of depletion layer is approximately

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