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To obtain n-type extrinsic semiconductor...

To obtain n-type extrinsic semiconductor, the impurity element to be added to germanium should be of valency

A

2

B

5

C

4

D

3

Text Solution

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The correct Answer is:
B
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In an intrinsic semiconductor, the fermi energy level is

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  2. With increase in temperature in an intrinsic semiconductor the ration ...

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  3. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  4. What are the majority carriers in a p-type semiconductor?

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  5. The objective of adding impurities in the extrinsic semiconductor is

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  6. In intrinsic semiconductor conductivity is due to.

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  7. In intrinsic semiconductor conductivity is due to.

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  8. When the conductivity of a semiconductor is only due to breaking of co...

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  9. The potential barrier at PN junction is due to

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  10. A PN junction diode cannot be used

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  11. p-n junction diode acts as

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  12. On increasing reverse voltage in a p-n junction diode the value of rev...

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  13. In forward bias the depletion layer behaves like

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  14. p-n junction in reverse bias behaves like

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  15. The main cause of avalence breakdown is

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  16. When p-n junction is forward biased, the current across the junction i...

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  17. The current through any p-n junction is due to (a) drift of charge c...

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  18. The thickness of depletion layer is approximately

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  19. The depletion region is

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  20. Diffusion current in a p-n junction is greater than the drift current ...

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