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The objective of adding impurities in th...

The objective of adding impurities in the extrinsic semiconductor is

A

to increases the conductivity of the semiconductor

B

to increases the density of total current carries

C

to increases the density of either holes or electrons

D

to eliminate the electron-hole pairs produced in intrinsic semiconductor.

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The correct Answer is:
C
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  2. What are the majority carriers in a p-type semiconductor?

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  3. The objective of adding impurities in the extrinsic semiconductor is

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  4. In intrinsic semiconductor conductivity is due to.

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  5. In intrinsic semiconductor conductivity is due to.

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  6. When the conductivity of a semiconductor is only due to breaking of co...

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  7. The potential barrier at PN junction is due to

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  8. A PN junction diode cannot be used

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  9. p-n junction diode acts as

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  10. On increasing reverse voltage in a p-n junction diode the value of rev...

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  11. In forward bias the depletion layer behaves like

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  12. p-n junction in reverse bias behaves like

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  13. The main cause of avalence breakdown is

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  14. When p-n junction is forward biased, the current across the junction i...

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  15. The current through any p-n junction is due to (a) drift of charge c...

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  16. The thickness of depletion layer is approximately

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  17. The depletion region is

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  18. Diffusion current in a p-n junction is greater than the drift current ...

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  19. Diode is forward biased and the applied voltage is greater than the po...

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  20. When a junction diode is reverse biased, then current called drift cur...

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