Home
Class 12
PHYSICS
When the conductivity of a semiconductor...

When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semi conductor is called.

A

n-type

B

p-type

C

instrinsic

D

extrinsic junction diode

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise C.U.Q (APPLICATION OF JUNCTION DIODE AS RECTIFIER)|7 Videos

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise C.U.Q (SPECIAL PURPOSE P-N JUNCTION DIODES)|51 Videos

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise EVALUATE YOURSELF-4|5 Videos

  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (H.W)|36 Videos

  • WAVE OPTICS

    NARAYNA|Exercise Exercise - 4 Polarisation|9 Videos

Similar Questions

Explore conceptually related problems

when the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the semiconductor is said to be

Conductivity in semiconductor is due to

Explain the conductivity of n-type semi-conductors.

Electric conduction in a semiconductor takes place due to

Which species contains only covalent bonds?

Which species contains only covalent bonds?

NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In intrinsic semiconductor conductivity is due to.

    Text Solution

    |

  2. In intrinsic semiconductor conductivity is due to.

    Text Solution

    |

  3. When the conductivity of a semiconductor is only due to breaking of co...

    Text Solution

    |

  4. The potential barrier at PN junction is due to

    Text Solution

    |

  5. A PN junction diode cannot be used

    Text Solution

    |

  6. p-n junction diode acts as

    Text Solution

    |

  7. On increasing reverse voltage in a p-n junction diode the value of rev...

    Text Solution

    |

  8. In forward bias the depletion layer behaves like

    Text Solution

    |

  9. p-n junction in reverse bias behaves like

    Text Solution

    |

  10. The main cause of avalence breakdown is

    Text Solution

    |

  11. When p-n junction is forward biased, the current across the junction i...

    Text Solution

    |

  12. The current through any p-n junction is due to (a) drift of charge c...

    Text Solution

    |

  13. The thickness of depletion layer is approximately

    Text Solution

    |

  14. The depletion region is

    Text Solution

    |

  15. Diffusion current in a p-n junction is greater than the drift current ...

    Text Solution

    |

  16. Diode is forward biased and the applied voltage is greater than the po...

    Text Solution

    |

  17. When a junction diode is reverse biased, then current called drift cur...

    Text Solution

    |

  18. Among the following one statement is not correct when a junction diode...

    Text Solution

    |

  19. Consider the following statement A and B and identify the correct choi...

    Text Solution

    |

  20. The potential in the depletion layer due to.

    Text Solution

    |