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The potential barrier at PN junction is ...

The potential barrier at `PN` junction is due to

A

fixed acceptor and donor ions on either side of the junction

B

minority carries on either side of the junction

C

majority carriers on eitter side of the junction

D

both majority and minority carries on either side of junction.

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The correct Answer is:
A
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The potential barrier at a p-n junction is due to charges on either side of the junction. These charges are

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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In intrinsic semiconductor conductivity is due to.

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  2. When the conductivity of a semiconductor is only due to breaking of co...

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  3. The potential barrier at PN junction is due to

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  4. A PN junction diode cannot be used

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  5. p-n junction diode acts as

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  6. On increasing reverse voltage in a p-n junction diode the value of rev...

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  7. In forward bias the depletion layer behaves like

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  8. p-n junction in reverse bias behaves like

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  9. The main cause of avalence breakdown is

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  10. When p-n junction is forward biased, the current across the junction i...

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  11. The current through any p-n junction is due to (a) drift of charge c...

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  12. The thickness of depletion layer is approximately

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  13. The depletion region is

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  14. Diffusion current in a p-n junction is greater than the drift current ...

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  15. Diode is forward biased and the applied voltage is greater than the po...

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  16. When a junction diode is reverse biased, then current called drift cur...

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  17. Among the following one statement is not correct when a junction diode...

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  18. Consider the following statement A and B and identify the correct choi...

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  19. The potential in the depletion layer due to.

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  20. Pickout the incorrect statement regarding reverse saturation current i...

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