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The main cause of avalence breakdown is...

The main cause of avalence breakdown is

A

collision by ionisation

B

high doping

C

recombination of electrons and holes

D

low doping

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The correct Answer is:
A
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. In forward bias the depletion layer behaves like

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  2. p-n junction in reverse bias behaves like

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  3. The main cause of avalence breakdown is

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  4. When p-n junction is forward biased, the current across the junction i...

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  5. The current through any p-n junction is due to (a) drift of charge c...

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  6. The thickness of depletion layer is approximately

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  7. The depletion region is

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  8. Diffusion current in a p-n junction is greater than the drift current ...

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  9. Diode is forward biased and the applied voltage is greater than the po...

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  10. When a junction diode is reverse biased, then current called drift cur...

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  11. Among the following one statement is not correct when a junction diode...

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  12. Consider the following statement A and B and identify the correct choi...

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  13. The potential in the depletion layer due to.

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  14. Pickout the incorrect statement regarding reverse saturation current i...

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  15. When the p-n junction diode is reverse biased, the thickness of the de...

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  16. p-n junction diode can be used as

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  17. A p-n junction diode is reverse biased. Then

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  18. In the middle of the depletion layer of a reverse - biased p - n junc...

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  19. When p-n junction diode is forward biased then

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  20. In Fig . V(0) is the potential barrier across a p-n junction, when no ...

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