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The current through any p-n junction is ...

The current through any `p-n` junction is due to
(a) drift of charge carriers
(b) diffusion of charge carriers
( c) different concentrations of same type of charge carriers in different regions.
(d) Same concentrations of same type of charge carriers in different regions

A

a,b and c

B

a and b only

C

only d

D

a,b,c,d

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The correct Answer is:
A
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. The main cause of avalence breakdown is

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  2. When p-n junction is forward biased, the current across the junction i...

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  3. The current through any p-n junction is due to (a) drift of charge c...

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  4. The thickness of depletion layer is approximately

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  5. The depletion region is

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  6. Diffusion current in a p-n junction is greater than the drift current ...

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  7. Diode is forward biased and the applied voltage is greater than the po...

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  8. When a junction diode is reverse biased, then current called drift cur...

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  9. Among the following one statement is not correct when a junction diode...

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  10. Consider the following statement A and B and identify the correct choi...

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  11. The potential in the depletion layer due to.

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  12. Pickout the incorrect statement regarding reverse saturation current i...

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  13. When the p-n junction diode is reverse biased, the thickness of the de...

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  14. p-n junction diode can be used as

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  15. A p-n junction diode is reverse biased. Then

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  16. In the middle of the depletion layer of a reverse - biased p - n junc...

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  17. When p-n junction diode is forward biased then

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  18. In Fig . V(0) is the potential barrier across a p-n junction, when no ...

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  19. In Fig assuming the diodes to be ideal :

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  20. A Si and a Ge diode has identical physical dimensions. The band gap in...

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