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The thickness of depletion layer is appr...

The thickness of depletion layer is approximately

A

`1 mu m`

B

1 mm

C

1 cm

D

1 m

Text Solution

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The correct Answer is:
A
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. When p-n junction is forward biased, the current across the junction i...

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  2. The current through any p-n junction is due to (a) drift of charge c...

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  3. The thickness of depletion layer is approximately

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  4. The depletion region is

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  5. Diffusion current in a p-n junction is greater than the drift current ...

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  6. Diode is forward biased and the applied voltage is greater than the po...

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  7. When a junction diode is reverse biased, then current called drift cur...

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  8. Among the following one statement is not correct when a junction diode...

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  9. Consider the following statement A and B and identify the correct choi...

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  10. The potential in the depletion layer due to.

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  11. Pickout the incorrect statement regarding reverse saturation current i...

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  12. When the p-n junction diode is reverse biased, the thickness of the de...

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  13. p-n junction diode can be used as

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  14. A p-n junction diode is reverse biased. Then

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  15. In the middle of the depletion layer of a reverse - biased p - n junc...

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  16. When p-n junction diode is forward biased then

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  17. In Fig . V(0) is the potential barrier across a p-n junction, when no ...

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  18. In Fig assuming the diodes to be ideal :

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  19. A Si and a Ge diode has identical physical dimensions. The band gap in...

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  20. The correct curve between potential (V) and distance (d) near p-n junc...

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