The depletion region is...

The depletion region is

region of opposite charges q

neutral region

region of infinite energy

region of free currents carries

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Q6.When "p" - "n" junction diode is forward biased,then (a)the depletion region is reduced and barrier height is increased (b) the depletion region is widened and barrier height is reduced (c)both the depletion region and barrier height are reduced (d) both the depletion region and barrier height are increased

A certain p-n junction, having a depletion region of width 20 mum , was found to have a breakdown voltage of 100 V. If the width of the depletion region is reduced to 1 mu m during its production, then it can be used as a Zener diode for voltage regulation of

A zener diode has a contact potential of 1 V in the absence of biasing. It undergoes Zener breakdown for an electric field of 10^(6) V/m at the depletion region of p-n junction. If the width of the depletion region is 2.5 mu m, what should be the reverse biased potential for the Zener breakdown to occur ?

A zener diode has a contract potential of 0.8 V in the absence of biasing. It undergoes zener breakdown for an electric field of 10^(6) Vm^(-1) at the depletion region of p-n junction. If the width of the depletion region is 2-4mu m, what should be the reverse biased potential for the zener breakdown to occur?

(a) state briefly the processes involved in the formation of p-n how the depletion region is formed (b) using the necessary ciruit diagrams show p-n jucntion are obtained in (i) forward biasing (ii) reverse biasing how these characteiistics are made use of in recitifcation

In a p-n junction, the depletion region is 400nm wide and and electric field of 5xx10^5Vm_(-1) exists in it (a)Find the geight of the potential barrier, (b)What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?

The depletion region of a p - n junction is formed

The depletion region of a p-n junction contains :-

NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)

The current through any p-n junction is due to (a) drift of charge c...
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The thickness of depletion layer is approximately
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The depletion region is
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Diffusion current in a p-n junction is greater than the drift current ...
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Diode is forward biased and the applied voltage is greater than the po...
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When a junction diode is reverse biased, then current called drift cur...
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Among the following one statement is not correct when a junction diode...
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Consider the following statement A and B and identify the correct choi...
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The potential in the depletion layer due to.
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Pickout the incorrect statement regarding reverse saturation current i...
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When the p-n junction diode is reverse biased, the thickness of the de...
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p-n junction diode can be used as
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A p-n junction diode is reverse biased. Then
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In the middle of the depletion layer of a reverse - biased p - n junc...
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When p-n junction diode is forward biased then
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In Fig . V(0) is the potential barrier across a p-n junction, when no ...
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In Fig assuming the diodes to be ideal :
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A Si and a Ge diode has identical physical dimensions. The band gap in...
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The correct curve between potential (V) and distance (d) near p-n junc...
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Which of the following is reverse biased diode?
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