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Consider the following statement A and B...

Consider the following statement `A` and `B` and identify the correct choice of the given answers
`A:` The width of the depletion layer in a `P-N` junction diode increases in forwards biase
`B:` In an intrinsic semiconductor the fermi energy level is exactely in the middle of the forbidden gap

A

A is true and B is false

B

Both A and B are false

C

A is false and B is true

D

Both A and B are true

Text Solution

Verified by Experts

The correct Answer is:
C
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
  1. The thickness of depletion layer is approximately

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  2. The depletion region is

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  3. Diffusion current in a p-n junction is greater than the drift current ...

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  4. Diode is forward biased and the applied voltage is greater than the po...

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  5. When a junction diode is reverse biased, then current called drift cur...

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  6. Among the following one statement is not correct when a junction diode...

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  7. Consider the following statement A and B and identify the correct choi...

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  8. The potential in the depletion layer due to.

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  9. Pickout the incorrect statement regarding reverse saturation current i...

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  10. When the p-n junction diode is reverse biased, the thickness of the de...

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  11. p-n junction diode can be used as

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  12. A p-n junction diode is reverse biased. Then

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  13. In the middle of the depletion layer of a reverse - biased p - n junc...

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  14. When p-n junction diode is forward biased then

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  15. In Fig . V(0) is the potential barrier across a p-n junction, when no ...

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  16. In Fig assuming the diodes to be ideal :

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  17. A Si and a Ge diode has identical physical dimensions. The band gap in...

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  18. The correct curve between potential (V) and distance (d) near p-n junc...

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  19. Which of the following is reverse biased diode?

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  20. In the case of forward biasing of PN-junction, which one of the follow...

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