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The part of a transistor which is heavil...

The part of a transistor which is heavily doped to produced large number of majority carries is

A

emitter

B

base

C

collector

D

can be any of the above three

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The correct Answer is:
To solve the question regarding which part of a transistor is heavily doped to produce a large number of majority carriers, we can follow these steps: ### Step 1: Understand the Structure of a Transistor Transistors can be of two types: NPN and PNP. In an NPN transistor, there are three regions: the emitter (N-type), the base (P-type), and the collector (N-type). In a PNP transistor, the arrangement is similar but with P-type as the emitter and collector, and N-type as the base. **Hint:** Remember that the transistor consists of three regions: emitter, base, and collector. ### Step 2: Identify the Doping Levels In a transistor: - The **emitter** is heavily doped to ensure a large number of majority carriers are available for conduction. - The **base** is lightly doped to allow for control of the current flow. - The **collector** is moderately doped. **Hint:** The emitter is designed to inject carriers into the base, hence it needs to be heavily doped. ### Step 3: Determine the Majority Carriers In an NPN transistor, the majority carriers in the emitter are electrons (due to heavy doping with donor impurities). In a PNP transistor, the majority carriers in the emitter are holes (due to heavy doping with acceptor impurities). **Hint:** Focus on the type of transistor to identify the majority carriers in each region. ### Step 4: Conclude the Answer Since the question asks for the part of the transistor that is heavily doped to produce a large number of majority carriers, the answer is the **emitter**. **Final Answer:** The part of a transistor which is heavily doped to produce a large number of majority carriers is the **Emitter**. ### Summary of Steps: 1. Understand the structure of a transistor. 2. Identify the doping levels of each region. 3. Determine the majority carriers in each region. 4. Conclude that the emitter is heavily doped to produce majority carriers.
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (SPECIAL PURPOSE P-N JUNCTION DIODES)
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  3. When n-p-n transistor is used as an amplifier :

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  4. The part of a transistor which is heavily doped to produced large numb...

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  5. When n-p-n transistor is used as an amplifier :

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  6. A n-p-n transistor conducts when

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  7. In a common-base amplifier, the phase difference between the input sig...

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  8. In a common emitter amplifier , the phase difference between the input...

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  9. When n-p-n transistor is used as an amplifier :

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  10. In a PNP transistor the base is the N-region. What is the width relat...

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  11. A three terminal device with one terminal common to both the output an...

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  12. Input and output signal of an amplifier in CE configuration are always

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  16. In case of NPN transistor, emitter current is always greater than coll...

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  17. When a transistor amplifier having current gain of 75 is given an inpu...

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  18. An oscillator is an amplifier with

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