`C` and `Si` both have same lattice structure, having `4` bonding electrons in each. However, `C` is insulator whereas `Si` is intrinsic semiconductor. This is because

Options

A. The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit
B. In case of C the valance band is not completely filled even at at absolute zero temperature
C. In case of C the conduction band is partly filled even at absolute zero temperature
D. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third orbit

Answer

D

Explanation

The valence electrons in the case of C lie in the second orbit, whereas in case of Si they lies in the third orbit, therefore Si has loosely bounded valency electrons compared to C.