Which one of the following statement is false?

Options

A. Pure Si doped with trivalent impurities gives a p-type semiconductor
B. Majority carriers in a n-type semiconductor are holes
C. Minority carriers in a p-type semiconductor are electrons
D. The resistance of nitrinsic semiconductor decreases with increase of temperature

Answer

B

Explanation

p-type semiconductors are obtained by adding a small amount of trivalent impurity to pur semiconductor (Ge). n-type semiconductors are obtained by adding a small amount of pentavalent impurity to semiconductor (Ge).
The resistance of intrinsic semiconductors decreases with increase of temperature.