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A p-n photodiode is fabricated from a se...

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

A

`6000Å`

B

`4000 nm`

C

6000 nm

D

`4000Å`

Text Solution

Verified by Experts

The correct Answer is:
D

Only signals having wavelength less than threshold wavelength can be detected.
Energy `E=hv=h(c)/(lamda)implieslamda=(hc)/(E)`
Substituting the values of h, c and E in the above equation
`lamda=(6.6xx10^(-34)xx3xx10^(8))/(2.5xx1.6xx10^(-19))=5000Å`
As `4000Ålt5000Å`
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NARAYNA-SEMICONDUCTOR ELECTRONICS-EXERCISE -3
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  2. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  3. To get an output y=1 from the circuit shown below, the input must be

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  6. Which one of the following statement is false?

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  10. A p-n photodiode is fabricated from a semiconductor with a band gap of...

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  11. The circuit is equivalent to

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  12. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  13. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

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  14. In the energy band diagram of a material shown below, the open circles...

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  15. For a cubic crystal structure which one of the following relations ind...

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  16. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  17. In the following circuit, the output Y for all possible inputs A and B...

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  18. A forward biased diode is

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  19. A transistor is operated in common emitter configuration at constant c...

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