Home
Class 12
PHYSICS
The part of a transistor which is most h...

The part of a transistor which is most heavily doped to produce large number of majority carriers is

A

emitter

B

base

C

collector

D

Can be any of the above thee

Text Solution

Verified by Experts

The correct Answer is:
A
The emiiter is most heavily doped.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise ADDITIONAL EXERCISE (ASSERTION AND REASON TYPE QUESTIONS :)|19 Videos

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise EXERCISE -3|43 Videos

  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (H.W)|36 Videos

  • WAVE OPTICS

    NARAYNA|Exercise Exercise - 4 Polarisation|9 Videos

Similar Questions

Explore conceptually related problems

The part of a transistor which is most heavily doped to product large number of majority carriers is

The part of a transistor which is heavily doped to produce a large number of majority carriers, is

The part of a transistor which is heavily doped to produced large number of majority carries is

The part of a transistor which is hevaily doped to produce a large number of majority carriers is

In a transistor the region which is heavily doped is

Which part of human brain is most developed?

In Drosophila single mating could produce large number of progeny flies.

NARAYNA-SEMICONDUCTOR ELECTRONICS-EXERCISE-4
  1. In a semiconducto

    Text Solution

    |

  2. The energy band gap is maximum in

    Text Solution

    |

  3. The part of a transistor which is most heavily doped to produce large ...

    Text Solution

    |

  4. By increasing the temperature the specific resistance of a conductor a...

    Text Solution

    |

  5. At absolute zero , Si acts as

    Text Solution

    |

  6. A strip of copper and another of germanium are cooled from room tempe...

    Text Solution

    |

  7. In the middle of the depletion layer of a reverse - biased p - n junc...

    Text Solution

    |

  8. The difference in the variation of resistance with temperature in a me...

    Text Solution

    |

  9. A piece of copper and another of germanium are cooled from room temper...

    Text Solution

    |

  10. The manifestation of band structure in solids is due to

    Text Solution

    |

  11. Energy band in solids are a consequence of

    Text Solution

    |

  12. When forward bias is applied to a P-N junction, then what happence to ...

    Text Solution

    |

  13. When NPN transistor is used as an amplifier

    Text Solution

    |

  14. For a transistor amplifier in common emitter configuration for load im...

    Text Solution

    |

  15. The electrical conductivity of a semiconductor increases when electrom...

    Text Solution

    |

  16. In a full wave rectifier circuit operating from 50 Hz mains frequency ...

    Text Solution

    |

  17. In a common-base amplifier, the phase difference between the input sig...

    Text Solution

    |

  18. A solid which is not transperent to visible light and whose conductivi...

    Text Solution

    |

  19. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  20. In a common base mode of transistor, collector current is 5.488 mA for...

    Text Solution

    |