Home
Class 12
PHYSICS
Assertion : We cannot meausre that poten...

Assertion : We cannot meausre that potential barrier of p-n junction by putting a sensitive voltmeter across its terminals.
Reason: In the depletion layer, there are no free elctrons or holes and in the absence of forward bias, it offers, infinite, resistance.

A

If both assertion and reason are true and the reason is the correct explanation of the assertion

B

If both assertion and reason are true but the reason is not the correct explanation of the assertion

C

If assertio is true statement but reason is false.

D

If both assertion and reason are false statement

Text Solution

AI Generated Solution

The correct Answer is:
To solve the assertion and reason question regarding the potential barrier of a p-n junction, we can break it down into a step-by-step analysis. ### Step 1: Understand the Assertion The assertion states that we cannot measure the potential barrier of a p-n junction by placing a sensitive voltmeter across its terminals. This is true because the p-n junction has a built-in potential barrier that prevents current flow in the absence of an external voltage. **Hint for Step 1:** Consider what a potential barrier is and how it affects current flow in a p-n junction. ### Step 2: Analyze the Reason The reason provided states that in the depletion layer of the p-n junction, there are no free electrons or holes. This is also true. The depletion region is formed when the p-type and n-type materials are joined, and the free charge carriers recombine, leaving behind a region devoid of charge carriers. **Hint for Step 2:** Reflect on the characteristics of the depletion layer and its role in the behavior of the p-n junction. ### Step 3: Evaluate the Resistance in the Depletion Layer The reason further explains that in the absence of forward bias, the depletion layer offers infinite resistance. This means that no current can flow through the junction without an external voltage applied. Thus, a voltmeter would not be able to measure any potential difference across the terminals. **Hint for Step 3:** Think about how resistance affects the measurement of voltage and the implications of infinite resistance. ### Step 4: Conclusion on Assertion and Reason Since both the assertion and the reason are correct, and the reason explains the assertion, we can conclude that both statements are true and that the reason supports the assertion. **Hint for Step 4:** Consider how the relationship between the assertion and reason affects the overall validity of the statements. ### Final Answer Both the assertion and reason are correct, and the reason correctly explains the assertion. Therefore, we cannot measure the potential barrier of a p-n junction using a sensitive voltmeter due to the infinite resistance of the depletion layer in the absence of forward bias.

To solve the assertion and reason question regarding the potential barrier of a p-n junction, we can break it down into a step-by-step analysis. ### Step 1: Understand the Assertion The assertion states that we cannot measure the potential barrier of a p-n junction by placing a sensitive voltmeter across its terminals. This is true because the p-n junction has a built-in potential barrier that prevents current flow in the absence of an external voltage. **Hint for Step 1:** Consider what a potential barrier is and how it affects current flow in a p-n junction. ### Step 2: Analyze the Reason ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise EXERCISE-4|35 Videos
  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (H.W)|36 Videos
  • WAVE OPTICS

    NARAYNA|Exercise Exercise - 4 Polarisation|9 Videos

Similar Questions

Explore conceptually related problems

Can we measure the potential difference of a p-n junction by putting a sensitive voltmeter across its terminals?

Assertion: We can measure the potential barrier of a PN junction by putting a sensitive voltmeter across its terminals. Reason: The current through the PN junction is not same in forward and reversed bias.

p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor inclose contact with n-type semiconductor. A thin layer is developed at the p-n junction which is devoid of any charge carrier but has immobile ions. It is called depletion layer. At the junction a potential barrier appears, which does not allow the movement of majority charge carriers across the junction in the absence of any biasing of the junction. p-n junction offer low resistance when forward biased and high resistance when reverse biased. Read the above paragaph and answer the following question: (i) Can we measure the potential barrier of p-n junction by putting a sensitive voltmeter across its terminals? (ii) What practical lesson do you draw from the above study?

A potential barrier of 0.5V exists across a p-n junction . If the widht of depletion layer is 10^(-6) m, then intensity of electric field in this region will be

Explain the formation of depletion layer and potential barrier in p-n junction. Draw the circuit diagram of a half wave rectifier and explain its working.

(a) Define the terms deplection layer and barrier potintial for a p-n jucntion (i) an increase in the doping concentration and (ii) biasing across the junction affect the width of the depletion layer (b) Draw the cirucit diagram of a p-n diode used a s a half wave rectifier explain its working

Assertion (A): Ideal diode shows zero resistance in forward bias and infinite resitance in reverse bias. Reason (R): Depletion region of a p-n junction diode extends in reverse bias and contracts in forward bias.

NARAYNA-SEMICONDUCTOR ELECTRONICS-ADDITIONAL EXERCISE (ASSERTION AND REASON TYPE QUESTIONS :)
  1. Assertion : the following circuit represents 'OR' gate Reason : f...

    Text Solution

    |

  2. Assertion : In the following circuit the potential drop across the res...

    Text Solution

    |

  3. Assertion: NOT gate is also called inverter circuit. Reason: NOT gat...

    Text Solution

    |

  4. Assertion: The current gain in common base circuit is always less than...

    Text Solution

    |

  5. Assertion : The dominant mechanism for motion of charge carreis in for...

    Text Solution

    |

  6. Assertion : The value of current through p-n junction in the given fig...

    Text Solution

    |

  7. Statement-I : A p-n junction with reverse bias can be used as a photod...

    Text Solution

    |

  8. Assertion : In common base configuration, the current gain of the tran...

    Text Solution

    |

  9. Statement-I : Germanium is preferred over silicon for making semicondu...

    Text Solution

    |

  10. Assertion : The temparature coefficient of resistance is positive for ...

    Text Solution

    |

  11. Assertion : For a given applied voltage, conduction current in n-type ...

    Text Solution

    |

  12. Assertion : We cannot meausre that potential barrier of p-n junction b...

    Text Solution

    |

  13. Assertion : In Zener diode depletion layer is thin. Reason : In rev...

    Text Solution

    |

  14. Statement-I : A p-n junction with reverse bias can be used as a photod...

    Text Solution

    |

  15. Statement-I : When base region has larger width, the collector current...

    Text Solution

    |

  16. Statement-I : To be used as amplifier, the transistor in the common em...

    Text Solution

    |

  17. Assertion : A transistor amplifier operates in active region. Reason...

    Text Solution

    |

  18. Assertion: NAND or NOR gates are called digital building blocks. Rea...

    Text Solution

    |

  19. Assertion : In transistor, common emitter configuration is used to mak...

    Text Solution

    |