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Pure Si at 300 K has equal electron (ne)...

Pure Si at 300 K has equal electron `(n_e)` and hole `(n_(h))` concentration of `2.xx10^(16)` per `m^(3)`. Doping by indium increases `n_(h)` to `4xx10^(22) ` per `m^(3)`. Calculate `n_(e)` in the doped silicon.

Text Solution

Verified by Experts

For extrinsic semiconductors, `n_(e).n_(h) = n_(1)^(2)`
Or, `n_(e) = (n_(i)^(2))/(n_(h)) = (2 xx 10^(16))^(2)/(4 xx 10^(22)) = 1 xx 10^(10) per m^(3)`
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