Home
Class 12
PHYSICS
Suppose a pure Si-crystal has 5xx10^(28)...

Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that `n_(i)=1.5xx10^(16)m^(-3)`.

Text Solution

Verified by Experts

`n_(e) = 5 xx 10^(22) per m^(3)`
`n_(h) = 45 xx 10^(9) per m^(3)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise EXERCISE|13 Videos
  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment section -A (Objective Type Question)|38 Videos
  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos
  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

Suppose a pure Si crystal has 6xx10^(28) atoms m^(-3) . It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that n_(i)=0.5xx10^(16)m^(-3)

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Calculate the gyro magnetic ratio of electron (given 1.6 xx10^(-19) C, m_r=9.1xx10^(-3) kg )

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of holes in this semiconductor are

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The number of electrons in this semiconductor are

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-TRY YOUR SELF
  1. C, Si and Ge have same lattice structure. Why is C insulator, while ...

    Text Solution

    |

  2. A semiconductor is known to have an electron concentration of 6xx10^(1...

    Text Solution

    |

  3. Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3). It is doped b...

    Text Solution

    |

  4. If in p-n junction diode a sinusoidal input signal is applied as shown...

    Text Solution

    |

  5. In a reverse biased diode, when the applied voltage changes by 1V, the...

    Text Solution

    |

  6. Potential drop across forward junction p-n diode is 0.7 V. If a batter...

    Text Solution

    |

  7. In a semi conductor diode , the barrier potential offers opposition to...

    Text Solution

    |

  8. How is forward biasing different from reverse biasing in a p-n junctio...

    Text Solution

    |

  9. Application of a forward biase to a p-n junction:

    Text Solution

    |

  10. In a p-n junction having depletion layer of thickness 10^(-6) m the po...

    Text Solution

    |

  11. Pickout the incorrect statement regarding reverse saturation current i...

    Text Solution

    |

  12. In a full -wave rectifier circuit operating from 50 Hz mains frequency...

    Text Solution

    |

  13. Freuency of given AC signal is 50 Hz. When it connected to a half - wa...

    Text Solution

    |

  14. The output form of full-wave rectifier is

    Text Solution

    |

  15. The current in the forward bias is unknown to be more (~mA) than the c...

    Text Solution

    |

  16. Why are Si and Ga As preffered materials for solar cells?

    Text Solution

    |

  17. For a CE transistor amplifier, the audio signal voltage across the col...

    Text Solution

    |

  18. In common emitter transistor as shown in Fig., the V(BB) supply can be...

    Text Solution

    |

  19. Show the output waveform of OR gate for the following input waveforms ...

    Text Solution

    |

  20. Sketch the output waveform obtained from AND gate for the following in...

    Text Solution

    |