In a semiconductor diode, reserve bias c...

In a semiconductor diode, reserve bias current is due to drift of free electrons and holes caused by

A

Thermal excitations only

B

Impurity atoms only

C

Both (1) & (2)

D

Neither (1) nor (2)

Text Solution

Verified by Experts

The correct Answer is:

A

Promotional Banner

Promotional Banner

Topper's Solved these Questions

SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )
AAKASH INSTITUTE|Exercise Assignment section -B (Objective Type Question)|24 Videos
SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )
AAKASH INSTITUTE|Exercise Assignment section -C (Previous years type question)|77 Videos
SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )
AAKASH INSTITUTE|Exercise EXERCISE|13 Videos
RAY OPTICS AND OPTICAL INSTRUMENTS
AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos
SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS
AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

Electric current is due to drift of electrons in

Through a semiconductor, an electric current is due to drift of

Through an electrolyte an electrical current is due to drift of

Semiconductor is damaged by the strong current due to

Statement 1: In semiconductors current is obtained due to motion of electrons and holes. Statement-2: Breaking up of covalent bond produces holes in valance band and electrons in conduction band.

Statement-1: In semiconductors current is obtained due to motion of electrons and holes. Statement-2: Breaking up of covalent bond produces holes in valence band and electrons in conduction band.

The ratio of electron and hole currents in a semiconductor is 7/4 and the ratio of drift velocities of electrons and holes is 5/4, then the ratio of concentrations of electrons and holes will be

The ratio of electron and hole current in a semiconductor is (7)/(5) and the ratio of drift velocities electrons and holes is (1)/(4) ,then the ratio of concentrations of electrons and holes will be ?

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -A (Objective Type Question)

In an unbiased p-n junction which of the following is correct?
Text Solution
|
In a full wave rectifier circuit operating from 50 Hz mains frequency ...
Text Solution
|
In a semiconductor diode, reserve bias current is due to drift of free...
Text Solution
|
The value of form factor in case of half wave rectifier is
Text Solution
|
In a semiconductor diode p-side is earthed and N-side is applied a pot...
Text Solution
|
Zener diode is used for
Text Solution
|
A junction diode , in which one of the p or n - sections is made very ...
Text Solution
|
The materials suitable for making a solar cell is
Text Solution
|
In which of the configuration of a transistor , the power gain is high...
Text Solution
|
In a common-base amplifier, the phase difference between the input sig...
Text Solution
|
The current transfer ratio beta of a transistor is 50. The input resis...
Text Solution
|
In a common emitter transistor circuit, the base current is 40 muA , t...
Text Solution
|
In a transistor the base is very lightly doped as compared to the emit...
Text Solution
|
A transsitor is operated in CE configuration at V(CC) = 2 V such that ...
Text Solution
|
The input resistance of a silicon transistor is 665Omega. Its base cur...
Text Solution
|
The relationship between alpha and beta is given by
Text Solution
|
Input signal to a common emitter amplifier having a voltage gain of 10...
Text Solution
|
In a common base transistor circuit, the current gain is 0.98. On cha...
Text Solution
|
For a transistor amplifier power gain and voltage gain are 7.5 and 2.5...
Text Solution
|
The input resistance of a common-emitter amplifier is 2 kOmega and a.c...
Text Solution
|