In a transistor the base is very lightly...

In a transistor the base is very lightly doped as compared to the emitter because by doing so -

The flow across the base region is mainly because of electrons

The flow across the base region is mainly because of holes

Recombination is decreased in the base region

Base current is high

Text Solution

Verified by Experts

The correct Answer is:

Topper's Solved these Questions

SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )
AAKASH INSTITUTE|Exercise Assignment section -B (Objective Type Question)|24 Videos
SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )
AAKASH INSTITUTE|Exercise Assignment section -C (Previous years type question)|77 Videos
SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )
AAKASH INSTITUTE|Exercise EXERCISE|13 Videos
RAY OPTICS AND OPTICAL INSTRUMENTS
AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos
SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS
AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

The base of a transistor is kept very thin and lightly doped as compared to the emitter and collector region so that

In a transistor the base is made very than and is lightly doped with an impurity, because.

Assertion: Base in transistor is made very thin as compared to collector and emitter regions. Reason: Due to thin base power gain and voltage gain is obtained by a transistor.

For transistor action which of the following statement are correct (a) base emitter and collector regions should have smilar size and doping concentrations (b) the base region must be very thin and lightly doped (c ) the emitter junction is forward biased and collector junctions is reverse biased (d)both the emitter junction as well as the collector junction are forward biased

In a transistor with normal bias, the emitter base junction

In a transistor base is made thin and doped with little impurity atoms. Why?

In a transistor, the collector current is always · less then the emitter current because -

In an n-p-n transistor, the emitter current is always less than the emitter current, because

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -A (Objective Type Question)

The materials suitable for making a solar cell is
Text Solution
|
In which of the configuration of a transistor , the power gain is high...
Text Solution
|
In a common-base amplifier, the phase difference between the input sig...
Text Solution
|
The current transfer ratio beta of a transistor is 50. The input resis...
Text Solution
|
In a common emitter transistor circuit, the base current is 40 muA , t...
Text Solution
|
In a transistor the base is very lightly doped as compared to the emit...
Text Solution
|
A transsitor is operated in CE configuration at V(CC) = 2 V such that ...
Text Solution
|
The input resistance of a silicon transistor is 665Omega. Its base cur...
Text Solution
|
The relationship between alpha and beta is given by
Text Solution
|
Input signal to a common emitter amplifier having a voltage gain of 10...
Text Solution
|
In a common base transistor circuit, the current gain is 0.98. On cha...
Text Solution
|
For a transistor amplifier power gain and voltage gain are 7.5 and 2.5...
Text Solution
|
The input resistance of a common-emitter amplifier is 2 kOmega and a.c...
Text Solution
|
In a silicon transistor, a change of 7.89 mA in the emitter current pr...
Text Solution
|
The abjoining logic symbol is equivalent to
Text Solution
|
Copper has face centred cubic (fc c) lattice with interatomic spacing ...
Text Solution
|
Distance between body centered atom and a comer atom in sodium is (whe...
Text Solution
|
Liquid crystal display monitors are made of
Text Solution
|
Which of the following cannot be obtained from an IC?
Text Solution
|
Operational amplifier is a
Text Solution
|