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A p-n-p transistor is said to be in acti...

A `p-n-p` transistor is said to be in active region of operation, When

A

Is not formed

B

At emitter - base junction is wider than that at collector - base junction

C

At emitter - base junction is thinner than that at collector-base junction

D

At the two junctions have equals width

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The correct Answer is:
C
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -B (Objective Type Question)
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  2. A p-n-p transistor is said to be in active region of operation, When

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  3. A transistor has a current amplification factor of 60. In a CE amplifi...

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  4. A common emitter amplifier is designed with NPN transistor (alpha = 0....

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  5. Pure Si at 300 K has hole and electron densities are 1.5 xx 10^(16)m^(...

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  6. A common emitter transistor amplifier has a current gain of 50. If the...

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  7. A p-n photodiode is manufactured from a semiconductor with band gap of...

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  8. The electrical conductivity of semicondutor increases when electromagn...

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  9. Zener breakdown takes place if

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  10. In a p-n junction, solar cell, the value of photoelectromotive force p...

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  11. In case of an n-p-n transistor, the collector current is always less t...

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  12. The depletion region of p-n junction has a thickness of the order of

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  13. In an n-p-n transistor, the collector current is 10 mA. If 90% of the ...

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  14. A transistor cannot be used as an

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  15. What is the power gain in a CE amplifier, where input resistance is 3k...

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  16. A transistor having alpha = 0.99 is used in a common base amplifier. I...

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  17. A potential difference of 2.5 V is applied across the faces of a germa...

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  18. Three amplifiers each having voltage gain 10, are connected in series....

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  19. The maximum effeciency of full wave rectifier is

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  20. The output across the load resistance R is (##AAKP7NEETPHYSP7C29E0403...

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