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In forward biasing of the p-n junction:...

In forward biasing of the p-n junction:

A

The positive terminal of the battery is connected to p-side and the depletion region becomes thin

B

The positive terminal of the battery is connected to p-side and the depletion region becomes thick

C

The positive terminal of the battery is connected to n-side and the depletion region becomes thin

D

The positive terminal of the battery is connected to n-side and the depletion region becomes thick

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The correct Answer is:
A
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  2. If a small amount of antimony is added to germanium crystal

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  3. In forward biasing of the p-n junction:

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  4. Pure Si at 500 K has equal number of electron (n(e)) and hole (n(h)) c...

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  5. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  6. The device that can act as a complete electronic circuit is

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  7. Which of the following statement is False?

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  8. Which one of the following bonds produces a solid that reflects light ...

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  9. For transistor action which of the following statement are correct (...

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  10. A p-n photodiode is fabricated from a semiconductor with a band gap of...

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  11. A transistor is operated in common emitter configuration at V(c)=2 V s...

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  12. Sodium has body centred packing. Distance between two nearest atoms is...

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  13. If the lattice parameter for a crystalline structure is 3.6Å, then the...

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  14. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

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  15. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  16. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  17. For a cubic crystal structure which one of the following relations ind...

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  18. A transistor is operated in common emitter configuration at constant c...

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  19. A forward biased diode is

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  20. Application of a forward biase to a p-n junction:

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