Home
Class 12
PHYSICS
Pure Si at 500 K has equal number of ele...

Pure Si at 500 K has equal number of electron (`n_(e))` and hole (`n_(h))` concentrations of `1.5 xx10^(16) "m"^(-3)` . Doping by indium increases `n_(h)` to `4.5 xx10^(22) "m" ^(-3)` . The doped semiconductor is of

A

n-type with electron concentration `n_(e) = 2.5 xx 10^(23)m^(-3)`

B

p-type having electron concentrations `n_(e) = 5 xx 10^(9)m^(-3)`

C

n-type with electron concentration `n_(e) = 2.5 xx 10^(22)m^(-3)`

D

Semi-conductor crystal

Text Solution

Verified by Experts

The correct Answer is:
B
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment section -B (Objective Type Question)|24 Videos

  • RAY OPTICS AND OPTICAL INSTRUMENTS

    AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

Pure Si at 500K has equal number of electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16)m^(-3) . Dopping by indium. Increases n_(h) to 4.5xx10^(22) m^(-3) . The doped semiconductor is of

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrastions of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(theta) in the doped Si-

Pure Si at 300 K has equal electron (n_e) and hole (n_(h)) concentration of 2.xx10^(16) per m^(3) . Doping by indium increases n_(h) to 4xx10^(22) per m^(3) . Calculate n_(e) in the doped silicon.

Pure S_(i) at 300K has equal electron (n_(e)) and hole (n_(h)) Concentration of 1.5 xx 10 ^(6) m^(-3) .Doping by indium increases n_(h) 4.5 xx 10^(22) m^(-3) . Calculate the doped silicon.

Pure Si at 300K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) Doping by indium increases n_(h) to 3xx10^(22)m . Calculate n_(e_(2)) in the doped Si.

Pure Si at 400K has equal electron (n_(e)) and hole (n_(h)) concentrations of 3xx10^(16)m^(-3) . Doping by indium, n_(h) increases to 6xx10^(22)m^(-3) . Calculate n_(e) in the doped Si.

Pure Si at 300 K has equal electron (n_(i)) concentration of 1.5xx10^(16) m^(-3) . Doping by indium increases n_(h)4.5xx10^(22) m^(-3) n_(e) in the doped Si is

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. If a small amount of antimony is added to germanium crystal

    Text Solution

    |

  2. In forward biasing of the p-n junction:

    Text Solution

    |

  3. Pure Si at 500 K has equal number of electron (n(e)) and hole (n(h)) c...

    Text Solution

    |

  4. A common emitter amplifier has a voltage gain of 50, an input impedanc...

    Text Solution

    |

  5. The device that can act as a complete electronic circuit is

    Text Solution

    |

  6. Which of the following statement is False?

    Text Solution

    |

  7. Which one of the following bonds produces a solid that reflects light ...

    Text Solution

    |

  8. For transistor action which of the following statement are correct (...

    Text Solution

    |

  9. A p-n photodiode is fabricated from a semiconductor with a band gap of...

    Text Solution

    |

  10. A transistor is operated in common emitter configuration at V(c)=2 V s...

    Text Solution

    |

  11. Sodium has body centred packing. Distance between two nearest atoms is...

    Text Solution

    |

  12. If the lattice parameter for a crystalline structure is 3.6Å, then the...

    Text Solution

    |

  13. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

    Text Solution

    |

  14. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

    Text Solution

    |

  15. A common emitter amplifier has a voltage gain of 50, an input impedanc...

    Text Solution

    |

  16. For a cubic crystal structure which one of the following relations ind...

    Text Solution

    |

  17. A transistor is operated in common emitter configuration at constant c...

    Text Solution

    |

  18. A forward biased diode is

    Text Solution

    |

  19. Application of a forward biase to a p-n junction:

    Text Solution

    |

  20. Zener diode is used for

    Text Solution

    |