A p-n photodiode is fabricated from a se...

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

4000 nm

6000 nm

4000 A

6000 A

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A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.

A p-n junction is fabricated from a semiconductor with band gap of 2.8eV . Can it detect a wavelength of 6000nm ?

A p-n junction is fabricated from a semiconductor with band gap of 3.0 eV . Can it detect a wavelength of (i) 600nm (ii) 400nm ? Given, h=6.6xx10^(-34)Js .

Assertion: A P-N photodiode is made from a semiconductor for which E_(g)=2.8 eV . This photo diode will not detect the wavelength of 6000 nm . Reason: A PN photodiode detect wavelength lambda if (hc)/(lambda)gtE_(g) .

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