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A p-n photodiode is made of a material w...

A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearly

A

`20 xx 10^(14) Hz`

B

`10 xx 10^(14) Hz`

C

`5 xx 10^(14) Hz`

D

`1 xx 10^(14) Hz`

Text Solution

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The correct Answer is:
C
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. If the lattice parameter for a crystalline structure is 3.6Å, then the...

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  2. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

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  3. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  4. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  5. For a cubic crystal structure which one of the following relations ind...

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  6. A transistor is operated in common emitter configuration at constant c...

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  7. A forward biased diode is

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  8. Application of a forward biase to a p-n junction:

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  9. Zener diode is used for

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  10. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  11. Choose the only false statement from the following :

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  12. Copper has face centred cubic (fc c) lattice with interatomic spacing ...

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  13. The cations and anions are arranged n alternate form in:

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  14. In semiconductors at a room temperature

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  15. In good conductors of electricity, the type of bonding that exists is

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  16. In an insulator, the forbidden energy gap between the valence band and...

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  17. In a p-n junction depletion region has a thickness of the order of

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  18. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  19. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  20. In the case of forward biasing of PN-junction, which one of the follow...

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