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Application of a forward biase to a p-n ...

Application of a forward biase to a `p-n` junction:

A

Increases the number of donors on the n-side

B

Increases the electric field in the depletion zone

C

Increases the potential difference across the depeltion zone

D

Widens the depletion zone

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The correct Answer is:
A
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. A transistor is operated in common emitter configuration at constant c...

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  2. A forward biased diode is

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  3. Application of a forward biase to a p-n junction:

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  4. Zener diode is used for

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  5. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  6. Choose the only false statement from the following :

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  7. Copper has face centred cubic (fc c) lattice with interatomic spacing ...

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  8. The cations and anions are arranged n alternate form in:

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  9. In semiconductors at a room temperature

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  10. In good conductors of electricity, the type of bonding that exists is

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  11. In an insulator, the forbidden energy gap between the valence band and...

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  12. In a p-n junction depletion region has a thickness of the order of

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  13. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  14. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  15. In the case of forward biasing of PN-junction, which one of the follow...

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  16. When arsenic is added as an impurity to silicon, the resulting materia...

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  17. To obtain a P-type germanium semiconductor, it must be dopped with

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  18. The cause of the potential barrier in a p-n diode is:

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  19. A semiconducting device is connected in a series circuit with a batter...

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  20. p-n junction diode can be used as

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