Home
Class 12
PHYSICS
Carbon, silicon and germanium atoms have...

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by `(E_(g))_(C),(E_(g))_(Si)` and `(E_(g))_(Ge)`, respectively. Which one of the following relationship is true in their case?

A

`(E_(g))c gt (E_(g))Si`

B

`(E_(g))c = (E_(g))Si`

C

`(E_(g))c lt (E_(g))Ge`

D

`(E_(g))c lt (E_(g))Si`

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment section -B (Objective Type Question)|24 Videos

  • RAY OPTICS AND OPTICAL INSTRUMENTS

    AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

Carbo , silicon and Germanitum atomshave four valence electrons each . Their velence and conduction bands are separeated by energy nands gaps represented by (E_g)_C , (E_g)_(Si), (E_g)_(Ge) repectively . Which relativon is correct ?

Carbon , silicon and germanium have four valence elcectrons each . These are characterised by valence and conduction bands separated by energy band - gap respectively equal to (E_g)_(c) (E_g)_(si) and (E_g)_(Ge) . Which of the following statements ture ?

Carbon, silicon and germanium have four valence electrons each. The most appropriate statement for these elements (at room temperature) is

Carbon silicon and germanium have four valence electrons each these are characterised by valence and conduction bands separated by energy band gap respectively equal to which of the following statement is true (a) (E_(g))_(Si)lt(E_(g))_(Ge)lt(E_(g))_(c ) (b) (E_(g))_(c )lt(E_(g))_(Gelt(E_(g))_(Si) (c ) (E_(g))_(c )gt(E_(g))_(Si)gt(E_(g))_(Ge) (d)(E_(g))_(c )=(E_(g))_(si)=(E_(g))_(Ge)

Carbon , silicon and germanium have four velence electrons each . At room temperature which one of the following statements is most appropriate ?

If f(x)=e^(x) and g(x)= log_(e)x , hen which of the following is true?

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. Application of a forward biase to a p-n junction:

    Text Solution

    |

  2. Zener diode is used for

    Text Solution

    |

  3. Carbon, silicon and germanium atoms have four valence electrons each. ...

    Text Solution

    |

  4. Choose the only false statement from the following :

    Text Solution

    |

  5. Copper has face centred cubic (fc c) lattice with interatomic spacing ...

    Text Solution

    |

  6. The cations and anions are arranged n alternate form in:

    Text Solution

    |

  7. In semiconductors at a room temperature

    Text Solution

    |

  8. In good conductors of electricity, the type of bonding that exists is

    Text Solution

    |

  9. In an insulator, the forbidden energy gap between the valence band and...

    Text Solution

    |

  10. In a p-n junction depletion region has a thickness of the order of

    Text Solution

    |

  11. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

    Text Solution

    |

  12. In a reverse biased p-n junction, when the applied bias voltages is eq...

    Text Solution

    |

  13. In the case of forward biasing of PN-junction, which one of the follow...

    Text Solution

    |

  14. When arsenic is added as an impurity to silicon, the resulting materia...

    Text Solution

    |

  15. To obtain a P-type germanium semiconductor, it must be dopped with

    Text Solution

    |

  16. The cause of the potential barrier in a p-n diode is:

    Text Solution

    |

  17. A semiconducting device is connected in a series circuit with a batter...

    Text Solution

    |

  18. p-n junction diode can be used as

    Text Solution

    |

  19. In p-type semiconductor, the major charge carriers are:

    Text Solution

    |

  20. In forward bias, the width of potential barrier in a P-N junction diod...

    Text Solution

    |