Home
Class 12
PHYSICS
In semiconductors at a room temperature...

In semiconductors at a room temperature

A

The valence band is partially empty and the conduction band is partially filled

B

The valence band is completely filled and the conduction band is partially filled

C

The valence band is completely fille

D

The conduction band is completely empty

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment section -B (Objective Type Question)|24 Videos

  • RAY OPTICS AND OPTICAL INSTRUMENTS

    AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

In semiconductor at a room temperature

In semiconductors at a room tempreture

what is the behaviour of semiconductors at room temperature

What is the behaviour of semiconductors at room temperature

In intrinsic semiconductor at room temperature the no. of electrons and holes are

In an intrinsic semiconductor at room temperature, number of electrons and holes are

In intrinsic semiconductor at room temperature, the number of electrons and holes are

Assertion (A): The number of electrons in a p-type silicon semiconductor is less than the number of electrons in intrinsic silicon semiconductor at room temperature. Reason (R ): It is due to law of mass action.

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. Copper has face centred cubic (fc c) lattice with interatomic spacing ...

    Text Solution

    |

  2. The cations and anions are arranged n alternate form in:

    Text Solution

    |

  3. In semiconductors at a room temperature

    Text Solution

    |

  4. In good conductors of electricity, the type of bonding that exists is

    Text Solution

    |

  5. In an insulator, the forbidden energy gap between the valence band and...

    Text Solution

    |

  6. In a p-n junction depletion region has a thickness of the order of

    Text Solution

    |

  7. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

    Text Solution

    |

  8. In a reverse biased p-n junction, when the applied bias voltages is eq...

    Text Solution

    |

  9. In the case of forward biasing of PN-junction, which one of the follow...

    Text Solution

    |

  10. When arsenic is added as an impurity to silicon, the resulting materia...

    Text Solution

    |

  11. To obtain a P-type germanium semiconductor, it must be dopped with

    Text Solution

    |

  12. The cause of the potential barrier in a p-n diode is:

    Text Solution

    |

  13. A semiconducting device is connected in a series circuit with a batter...

    Text Solution

    |

  14. p-n junction diode can be used as

    Text Solution

    |

  15. In p-type semiconductor, the major charge carriers are:

    Text Solution

    |

  16. In forward bias, the width of potential barrier in a P-N junction diod...

    Text Solution

    |

  17. Depletion layer consists of

    Text Solution

    |

  18. In junction diode, the holes are due to

    Text Solution

    |

  19. In a PN-junction

    Text Solution

    |

  20. Reverse bias applied to a junction diode

    Text Solution

    |