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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-

A

`1.5 xx 10^(16)m(-3)`

B

`3.0 xx 10^(22)m(-3)`

C

`5 xx 10^(9)m(-3)`

D

`3 xx 10^(6)m(-3)`

Text Solution

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The correct Answer is:
C
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. In an insulator, the forbidden energy gap between the valence band and...

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  2. In a p-n junction depletion region has a thickness of the order of

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  3. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  4. In a reverse biased p-n junction, when the applied bias voltages is eq...

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  5. In the case of forward biasing of PN-junction, which one of the follow...

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  6. When arsenic is added as an impurity to silicon, the resulting materia...

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  7. To obtain a P-type germanium semiconductor, it must be dopped with

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  8. The cause of the potential barrier in a p-n diode is:

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  9. A semiconducting device is connected in a series circuit with a batter...

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  10. p-n junction diode can be used as

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  11. In p-type semiconductor, the major charge carriers are:

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  12. In forward bias, the width of potential barrier in a P-N junction diod...

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  13. Depletion layer consists of

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  14. In junction diode, the holes are due to

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  15. In a PN-junction

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  16. Reverse bias applied to a junction diode

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  17. Barrier potential of a p-n junction diode does not depend on

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  18. In a p-n junction photo cell, the value of the photo electromotive for...

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  19. In a zener diode, break down occurs in reverse bias due to

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  20. In a p-n junction, depletion region contains

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