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To obtain a P-type germanium semiconduct...

To obtain a `P`-type germanium semiconductor, it must be dopped with

A

Indium

B

Phosphorus

C

Aresenic

D

Antimony

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The correct Answer is:
A
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AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. In the case of forward biasing of PN-junction, which one of the follow...

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  2. When arsenic is added as an impurity to silicon, the resulting materia...

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  3. To obtain a P-type germanium semiconductor, it must be dopped with

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  4. The cause of the potential barrier in a p-n diode is:

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  5. A semiconducting device is connected in a series circuit with a batter...

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  6. p-n junction diode can be used as

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  7. In p-type semiconductor, the major charge carriers are:

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  8. In forward bias, the width of potential barrier in a P-N junction diod...

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  9. Depletion layer consists of

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  10. In junction diode, the holes are due to

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  11. In a PN-junction

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  12. Reverse bias applied to a junction diode

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  13. Barrier potential of a p-n junction diode does not depend on

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  14. In a p-n junction photo cell, the value of the photo electromotive for...

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  15. In a zener diode, break down occurs in reverse bias due to

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  16. In a p-n junction, depletion region contains

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  17. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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  18. The peak voltage in the output of a half-wave diode rectifier fed with...

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  19. when NPN transistor is used as an amplifier then ……….

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  20. An oscillator is nothing but an amplifier with

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