Home
Class 12
PHYSICS
The cause of the potential barrier in a ...

The cause of the potential barrier in a p-n diode is:

A

Depletion of negative charges near the junction

B

Concentration of positive charges near the junction

C

Depletion of positive charges near the junction

D

Concentration of positive and negative charges near the junction

Text Solution

Verified by Experts

The correct Answer is:
D
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos
  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE|Exercise Assignment section -B (Objective Type Question)|24 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    AAKASH INSTITUTE|Exercise ASSIGNMENT (SECTION - D)|16 Videos
  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE|Exercise Assignment (Section-D (Assertion and reason))|5 Videos

Similar Questions

Explore conceptually related problems

The height of potential barrier in p-n junction diode is.............to temperature in kelvin.

In forward bias, the width of potential barrier in a P-N junction diode

In a forward biased PN - junction diode, the potential barrier in the depletion region is of the from...

A P-N junction diode connected to a battery of e.m.f. 4.5 V and an external resistance of 1000 Omega . What is the value of current in the circuit, if potential barrier in the diode = 0.5 V

In a forward biased p-n junction diode, the potential barrier in the depletion region will be of the form

Consider the following statements A and B and identify the correct answer. (A)A zener diode should be connected in reverse bias for proper functioning (B) The potential barrier of a p-n junction lies between 2 V and 5 V

In Fig . V_(0) is the potential barrier across a p-n junction, when no battery is connected across the junction

AAKASH INSTITUTE-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. When arsenic is added as an impurity to silicon, the resulting materia...

    Text Solution

    |

  2. To obtain a P-type germanium semiconductor, it must be dopped with

    Text Solution

    |

  3. The cause of the potential barrier in a p-n diode is:

    Text Solution

    |

  4. A semiconducting device is connected in a series circuit with a batter...

    Text Solution

    |

  5. p-n junction diode can be used as

    Text Solution

    |

  6. In p-type semiconductor, the major charge carriers are:

    Text Solution

    |

  7. In forward bias, the width of potential barrier in a P-N junction diod...

    Text Solution

    |

  8. Depletion layer consists of

    Text Solution

    |

  9. In junction diode, the holes are due to

    Text Solution

    |

  10. In a PN-junction

    Text Solution

    |

  11. Reverse bias applied to a junction diode

    Text Solution

    |

  12. Barrier potential of a p-n junction diode does not depend on

    Text Solution

    |

  13. In a p-n junction photo cell, the value of the photo electromotive for...

    Text Solution

    |

  14. In a zener diode, break down occurs in reverse bias due to

    Text Solution

    |

  15. In a p-n junction, depletion region contains

    Text Solution

    |

  16. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

    Text Solution

    |

  17. The peak voltage in the output of a half-wave diode rectifier fed with...

    Text Solution

    |

  18. when NPN transistor is used as an amplifier then ……….

    Text Solution

    |

  19. An oscillator is nothing but an amplifier with

    Text Solution

    |

  20. The correct relationship between the two current gains alpha and beta ...

    Text Solution

    |