To get `n`-type doped semiconductor, impurity to be added to silicon should have the following number of valence electrons

To get n-type doped semiconductor, the impurity to be added to silicon should have the following number of valence electrons ?

To get n-type semiconductor, impurity to be added to silicon should have the following number of valence electrons

To get p-type semiconductor , impurity to be added to silicon should have wihich of the following number of valence electrons?