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[" (n) and hole "(n(n))" concentrations ...

[" (n) and hole "(n_(n))" concentrations of "1.5times10^(@)m^(-3)" ."],[" Doping by indium increases "n_(h)" to "4.5times10^(22)m^(-3)" .The "],[" doped semiconductor is of "],[" O type with "ne=2,5times1023],[" p type with ne "=5times1023],[" n type with ne "=5times1023],[" p type with ne "=2.5times1023]

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Pure Si at 500 K has equal electron n_e and hole n_h concentration of 1.5 xx 10^16 m^-3 . Doping by Indium increases n_h to 4.5 xx 10^22 m^-3 . The doped semiconductor is of

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