Consider the following statement A and B and identify the correct choice of the given answer.
A. The width of the depletion layer in a p-n junction diode increases in forward bias.
B. In a intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden energy gap.

Options

A. A is true and B is false
B. Both A and B are false
C. A is false and B is true
D. Both A and B are true

Answer

C

Explanation

(i) In the forward bias region, the width of the depletion region in a p-n junction diode decreases.
(ii) The fermi energy level in an intrinsic semiconductor lies in the middle of the forbidden energy gap.