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In intrinsic semiconductor...

In intrinsic semiconductor

A

The conduction band and valence band overlap

B

The gap between conduction band and valence band is more than 16 eV

C

The gap between conduction and valence band is near about 1 eV

D

None of above

Text Solution

Verified by Experts

The correct Answer is:
C
In intrinsic semiconductor, the energy gap between conduction band and valence band is very small i.e., its about 1 eV.
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SIA PUBLICATION-SEMICONDUCTOR ELECTRONICS-MCQ
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  3. In intrinsic semiconductor

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  4. The element that can be used as acceptor impurity to dope silicon is

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  5. A hole is

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  6. The potential in the depletion layer is due to

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  7. The value indicated by fermi energy level in an intrinsic semiconducto...

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  8. The two diodes A and B are biased as shown, then -5V A ...

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  9. A piece of aluminium and germanium each are cooled from T(1)K to T(2)K...

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  10. When a p-n junction diode is reverse biased, the thickness of the depl...

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  11. Energy band gap E(g) in an insulator is of the order of

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  12. Indium impurity in germanium makes it into a

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  13. In an intrinsic semiconductor at room temperature number of electrons ...

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  14. In forward bias in a p-n junction, the potential barrier

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  15. In a reverse biased condition of a p-n junction

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  16. Which one of the following is an incorrect statement?

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  17. Covalent bond exists in

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  18. In a p-type semiconductor, the electrical conduction is due to

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  19. To obtain p-type extrinsic semiconductor, the impurity element to be a...

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  20. If a battery is connected across a p-n junction with p-type connected ...

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