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Which one of the following is an incorre...

Which one of the following is an incorrect statement?

A

In an intrinsic semiconductor, the number of holes in the valence band is equal to numher of electrons in the conduction band

B

When heated the conductivity of an intrinsic semiconductor, increases

C

The fermi level lies near the valence band in an intrinsic semiconductor

D

The majority carries in a p-type semiconductor are holes

Text Solution

Verified by Experts

The correct Answer is:
A

Statement (C) is incorrect, because the fermi level in an intrinsic semiconductor lies in the centre of forbidden energy gap.
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SIA PUBLICATION-SEMICONDUCTOR ELECTRONICS-MCQ
  1. A piece of aluminium and germanium each are cooled from T(1)K to T(2)K...

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  2. When a p-n junction diode is reverse biased, the thickness of the depl...

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  3. Energy band gap E(g) in an insulator is of the order of

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  4. Indium impurity in germanium makes it into a

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  5. In an intrinsic semiconductor at room temperature number of electrons ...

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  6. In forward bias in a p-n junction, the potential barrier

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  7. In a reverse biased condition of a p-n junction

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  8. Which one of the following is an incorrect statement?

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  9. Covalent bond exists in

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  10. In a p-type semiconductor, the electrical conduction is due to

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  11. To obtain p-type extrinsic semiconductor, the impurity element to be a...

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  12. If a battery is connected across a p-n junction with p-type connected ...

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  13. The majority carriers in a p-type semiconductor are

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  14. If an intrinsic semiconductor a pentavalent element is added as impuri...

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  15. In an intrinsic semiconductor the charge carriers responsible for elec...

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  16. A semiconductor device which is used for detecting light intensity is ...

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  17. A piece of aluminium and germanium each are cooled from T(1)K to T(2)K...

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  18. The energy level stationed at the centre of forbidden energy gap of an...

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  19. The method of connecting the negative pole of battery to p-material an...

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  20. When boron is added as impurity to silicon, the resulting material is

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