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Draw the V-I characterisitics of p-n jun...

Draw the V-I characterisitics of p-n junction diode in forward bias and in reverse bias.

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In a p-n junction , forward biasing is applied by connecting +ve of the battery to p-section and -ve of the battery of n-section. In the case of reverse biasing, +ve of the battery is connected to n-section and -ve of the battery is connected to p-section . As a result, the strength of the current carriers moving in the circuit will

change. It can be used by taking the arrangement to use it as half or full wave rectifier or in any other form. A graph between voltage and current for forward bias and reverse bias is as shown in the fig. From the fig., we find that during forward bias, the p-n junction offers less resistance and during reverse bias it offers large resistance.
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Explore conceptually related problems

(a). Explains briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are obtainedin (i) forward bias, and (ii) reverse bias. (b). A photo diode is fabricated from a semiconductor with a band gap of 2.8 EV. Can it detect wave length of 6000. nm? Justify.

Explain the working of p-n junction diode in forward and reverse biased mode.

In V-I characteristics of a p-n junction diode, why is the current under reverse bias almost independence of the applied potential upto a critical voltage?

Draw V-I characterictics of a p-n junction diode. Why does the reverse current show a sudden increase at the critical voltage? Name any semiconductor device which operates under the reverse bias in the breakdown region.

p-n junction in reverse bias behaves like

(a) Draw the V-I characteristic curve for forward and reverse bias of a p-n juction diode (b) what are th majority and ninority carriers in a p type semiconductor (c ) wirte down the symbol and truth table of OR gate

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