Home
Class 12
PHYSICS
A Ge specimen is dopped with Al. The con...

A `Ge` specimen is dopped with `Al`. The concentration of acceptor atoms is `~10^(21) at oms//m^(3)`. Given that the intrinsic concentration of electron hole pairs is `~10^(19)//m^(3)`, the concentration of electron in the speciman is

Promotional Banner

Similar Questions

Explore conceptually related problems

A Ge specimen is doped with Al. The concentration of acceptor atoms is 10^(21)"atoms/m"^(3) . Given that the intrinsic concentration of electron hole pairs is 10^(19)//m^(3) , the concentration of electrons in the specimen is …….

a Ge specimen is doped with AI the concentartion of acceptor atoms is ~ 10^(21) atoms/ m^3 ' given that the intrinsic concentartion of electron -hole pairs is ~ 10^(19)/m^3, the concentration of electron in the specimen is

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6 xx 10^(6)//m^(3) . If the donor concentration level is 4.8 xx 10^(20)//m^(3) , then the concentration of holes in the semiconductor is