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The dominant mechanisms for motion of ch...

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction are

A

are drift and diffusion respectively

B

are diffusin and drift respectively

C

is drift in both

D

is diffusion in both

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MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -COMPETION FILE (MULTIPLE CHOICE QUESTIONS WITH ONLY ONE CORRECT ANSWER)
  1. Atoms of phosphorus aresnic indium and bismuth are used for doping pur...

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  2. The current gain of a tramnsistor is 0.9 for common base configurati...

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  3. The dominant mechanisms for motion of charge carriers in forward and r...

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  4. Two diodes D(1) and D(2) each with forward resistance of 50 omega and...

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  5. Four diodes are connected in the adjoining in order for the circuit ...

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  6. I-V characteristics of four semiconductor devices are in graphs (i) ...

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  7. In which of the following connections the diode is forward biased

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  8. The above combination of gates produces a

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  10. Input A,B,C,D are given to a gate and y is the oputput obtained from ...

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  11. Si diode used in the circuit shhas a constant voltage drop of a maximu...

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  12. A transistor with a current gian of beta=50 is used as an amplifier if...

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  13. An n-p-n tansistor circuit is show below The arrangement represe...

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  14. At a plate potential of 150 V the palte current in a diode is 8 mA un...

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  15. In the circuit given below the p-n junction diode is ideal with negli...

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  16. In which of the following ciruict the potiential drop across the two p...

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  17. A piece of copper and anotehr piece of silicon are cooled down to 80 k...

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  18. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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  19. In the cirucit given below the knee voltage for both the diodes is 0.5...

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  20. The contribution in the total current flowing through a semiconductor ...

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