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I-V characteristics of four semiconduct...

I-V characteristics of four semiconductor devices are in graphs (i) ,(ii) (iii) and (iv) the characteristics of zener diode and solar cell are show correctly in :

A

(ii) and (iv) respectively

B

(i) and (ii) respectively

C

(ii) and (iii) respectively

D

(i) and (iv) respectively

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MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -COMPETION FILE (MULTIPLE CHOICE QUESTIONS WITH ONLY ONE CORRECT ANSWER)
  1. Two diodes D(1) and D(2) each with forward resistance of 50 omega and...

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  2. Four diodes are connected in the adjoining in order for the circuit ...

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  3. I-V characteristics of four semiconductor devices are in graphs (i) ...

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  4. In which of the following connections the diode is forward biased

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  5. The above combination of gates produces a

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  6. Ge and Si diods in the circuit belwo conduct at 0.3 V and 0.7 V respe...

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  7. Input A,B,C,D are given to a gate and y is the oputput obtained from ...

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  8. Si diode used in the circuit shhas a constant voltage drop of a maximu...

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  9. A transistor with a current gian of beta=50 is used as an amplifier if...

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  10. An n-p-n tansistor circuit is show below The arrangement represe...

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  11. At a plate potential of 150 V the palte current in a diode is 8 mA un...

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  12. In the circuit given below the p-n junction diode is ideal with negli...

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  13. In which of the following ciruict the potiential drop across the two p...

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  14. A piece of copper and anotehr piece of silicon are cooled down to 80 k...

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  15. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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  16. In the cirucit given below the knee voltage for both the diodes is 0.5...

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  17. The contribution in the total current flowing through a semiconductor ...

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  18. In the curcuit given below D(1) and D(2) are two identicall diodes an...

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  19. For the combination of gates given below the output y is high if

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  20. The base of a transistor is kept very thin and lightly doped as compa...

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