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In which of the following connections th...

In which of the following connections the diode is forward biased

A

B

C

D

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The correct Answer is:
To determine in which of the given connections the diode is forward biased, we need to follow these steps: ### Step-by-Step Solution: 1. **Understand the Diode Structure**: A diode consists of two parts: the P-type semiconductor (P side) and the N-type semiconductor (N side). The P side has an abundance of holes (positive charge carriers), while the N side has an abundance of electrons (negative charge carriers). 2. **Identify Forward Bias Condition**: A diode is said to be forward biased when the potential of the P side (Vp) is greater than the potential of the N side (Vn). Mathematically, this can be expressed as: \[ Vp > Vn \] 3. **Analyze Each Connection**: - **Connection 1**: P side = -1V, N side = +1V - Here, Vp = -1V and Vn = +1V. Since -1 < +1, this is reverse biased. - **Connection 2**: P side = -4V, N side = +4V - Here, Vp = -4V and Vn = +4V. Since -4 < +4, this is also reverse biased. - **Connection 3**: P side = +3V, N side = -3V - Here, Vp = +3V and Vn = -3V. Since +3 > -3, this is forward biased. - **Connection 4**: P side = -2V, N side = -2V - Here, Vp = -2V and Vn = -2V. Since -2 = -2, this is neither forward nor reverse biased. 4. **Conclusion**: The only connection where the diode is forward biased is the third connection (P side = +3V and N side = -3V). ### Final Answer: The diode is forward biased in the third connection (P side = +3V, N side = -3V). ---

To determine in which of the given connections the diode is forward biased, we need to follow these steps: ### Step-by-Step Solution: 1. **Understand the Diode Structure**: A diode consists of two parts: the P-type semiconductor (P side) and the N-type semiconductor (N side). The P side has an abundance of holes (positive charge carriers), while the N side has an abundance of electrons (negative charge carriers). 2. **Identify Forward Bias Condition**: A diode is said to be forward biased when the potential of the P side (Vp) is greater than the potential of the N side (Vn). Mathematically, this can be expressed as: \[ ...
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MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -COMPETION FILE (MULTIPLE CHOICE QUESTIONS WITH ONLY ONE CORRECT ANSWER)
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  2. I-V characteristics of four semiconductor devices are in graphs (i) ...

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  3. In which of the following connections the diode is forward biased

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  4. The above combination of gates produces a

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  6. Input A,B,C,D are given to a gate and y is the oputput obtained from ...

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  7. Si diode used in the circuit shhas a constant voltage drop of a maximu...

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  8. A transistor with a current gian of beta=50 is used as an amplifier if...

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  9. An n-p-n tansistor circuit is show below The arrangement represe...

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  10. At a plate potential of 150 V the palte current in a diode is 8 mA un...

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  11. In the circuit given below the p-n junction diode is ideal with negli...

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  12. In which of the following ciruict the potiential drop across the two p...

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  13. A piece of copper and anotehr piece of silicon are cooled down to 80 k...

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  14. A Ge specimen is dopped with Al. The concentration of acceptor atoms i...

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  15. In the cirucit given below the knee voltage for both the diodes is 0.5...

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  16. The contribution in the total current flowing through a semiconductor ...

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  17. In the curcuit given below D(1) and D(2) are two identicall diodes an...

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  18. For the combination of gates given below the output y is high if

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  19. The base of a transistor is kept very thin and lightly doped as compa...

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  20. A transistor -oscillator using a resonant circuit with an inductor L (...

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