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A p-n photodiode is fabricated from a se...

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

A

4000 nm

B

6000 nm

C

4000 A

D

6000 A

Text Solution

Verified by Experts

`E_(E) = 2.5 eV = 2.5 xx 1.6 xx 10^(-19) J`
`(hc)/( lambda_(max)) = 4 xx 10^(19) J`
`=4. 9695 xx 10^(-7) m = 4969 .5 xx 10^(-10) m`
Hence diode can detect signal of wavelength less than calculated `lambda_(max)`
most appropriate signal is 400 A
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