In a `p-n` junction diode, the currect `I` can expressed as `I=I_(0) exp((eV)/(2k_(B)T)-1)` where `I_(0)` is called the reverse saturation current, `V` is the voltage across the diode and is positive for forward bias and negative for reverse bias, and `I` is the current through the diode, `K_(B)` is the Boltzmann constant `(8.6 xx 10^(-5) eV//K)` and `T` is the absolute temperature. If for a given diode `I_(o) = 5 xx 10^(-12) A` and `T = 300 K`, then
(a) What will be the forward current at a formward voltage of `0.6V` ?
(b) What will be the increase in the current if the voltage across the diode is increased to `0.7 V` ?
( c) What is the dynamic resistance ?
(d) What will be current if reverse bias voltage changes from `1 V` to `2 V` ?

Options

A. 2.48 A
B. 2.97 A
C. 3.03 A
D. 3.17 A

Explanation

For V= 0 .7 V
`I=I_(0) [exp (27.13)-1A]`
`5 xx 10^(-12) xx 6.06 xx 10^(11) = 3.03 A`
`=2.96681 A`
`= 2.97 A`