Home
Class 12
PHYSICS
Assertion concentration of free electr...

Assertion concentration of free electrons in an n type semiciondluctor is approximately equal to the density of donor atoms
Reason when a p-n junction is forward biased the injected hole curent in the n region is proportional to the total charge of inljected minority carrier holes

A

If both asssertion and reason are correct and reason is a correct explanation of the assertion.

B

if both assertion and reason are corect but reason is not the correct explanation of assertion.

C

If assertion is correct but reason is incorrect.

D

If assertion is incorrect but reason is correct

Text Solution

AI Generated Solution

Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise COMPETION FILE (MATCHING TYPE QUESTIONS )|2 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise COMPETION FILE (MATRIX MATCH TYPE QUESTIONS)|2 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise COMPETION FILE( MULTIPLE CHOICE QUESTIONS )|17 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|14 Videos
  • WAVE OPTICAL

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|7 Videos

Similar Questions

Explore conceptually related problems

Region which have no free electron and holes in P-N junction is

A p-n junction diode is said to be forward biased, when a potential difference is p and n-regions and making applied across

Druing P-N junction formation when the electron and holes stops moving from P to N and N to P, then

The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field is applied across each of them. Compare the currents in them.