The breakdown in a reverse biased p-n junction diode is more likely to occur due to

Options

A. large velocity of the minority charge carriers if the doping concetration is small
B. large velocity of the miniority charge carriers if the doping concentration is large
C. strong electric field in a depletion region if the doping concentration is small
D. strong electric field in the depletion region if the doping concentraton is large

Explanation

During revese bias minority charge carriers are accelerated due to which ionisation occurs thus there will be more number of charge field will set up in the depeletion region due to large number of charge carriers