In `P-N` junction, the barrier potential offerse resistance to

In a p-n junction , the barrier potential offers resistance to

In a p-n junction diode, the barrier potential opposes diffusion of

In a p-n junction diode, the barrier potential opposes diffusion of

When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential 0.4V and the width of depletion region is 4.0 xx 10^(-7)m . this p-n junction is forwaed biased with a battery of voltage 3V adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. The intensity of the electric field in the depletion region when p-n junction is unbiased is

In p-n junction, depletion barrier near the junction is due to ………

In a p-n junction,a potential barrier of 250 mev exsists across the junction.A hole with a kimetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a)from the p-side and (b)from the n-side.

In a p-n junction,a potential barrier of 250 mev exsists across the junction.A hole with a kimetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a)from the p-side and (b)from the n-side.

In a p-n junction,a potential barrier of 250 mev exsists across the junction.A hole with a kimetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a)from the p-side and (b)from the n-side.

When forward bias is applied to a p-n junction, what happens to the potential barrier and the width of depletion region.

A p-n junction diode in forward bias is connected to a battery of 4 V and a resistance of 80 omega as shown in the ajoining determine the maximum current in the circuit barrier potential of p-n diode is 0.2 V